FZ250R65KE3NPSA1

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Mfr.Part #
FZ250R65KE3NPSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 6500V 500A 4800W
Stock
4
In Stock :
4

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Max Collector Current :
250A
Current - Collector (Ic) (Max) :
500A
Number of Elements :
1
Mounting Type :
Chassis Mount
Gate-Emitter Voltage-Max :
20V
Power Dissipation-Max (Abs) :
4800W
Voltage - Collector Emitter Breakdown (Max) :
6500V
Halogen Free :
Not Halogen Free
Configuration :
Single
Input :
Standard
Operating Temperature :
-50°C~125°C
Published :
2002
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
5mA
Lead Free :
Contains Lead
Collector Emitter Voltage (VCEO) :
6.5kV
VCEsat-Max :
3.4 V
Pbfree Code :
No
Factory Lead Time :
20 Weeks
RoHS Status :
Non-RoHS Compliant
NTC Thermistor :
No
Number of Pins :
5
Vce(on) (Max) @ Vge, Ic :
3.4V @ 15V, 250A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
Module
Mount :
Screw
Input Capacitance (Cies) @ Vce :
69nF @ 25V
Power - Max :
4800W
Datasheets
FZ250R65KE3NPSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FZ250R65KE3NPSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Operating Temperature:-50°C~125°C, Number of Pins:5, Package / Case:Module, FZ250R65KE3NPSA1 pinout, FZ250R65KE3NPSA1 datasheet PDF, FZ250R65KE3NPSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FZ250R65KE3NPSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FZ250R65KE3NPSA1


FZ250R65KE3NPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FZ250R65KE3NPSA1 Description


The FZ250R65KE3NPSA1 is a highly insulated module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module.



FZ250R65KE3NPSA1 Features


  • Electrical Features

  • Low VCEsat

  • Mechanical Features

  • Package with enhanced insulation of 10.4kV AC 10s

  • High creepage and clearance distances

  • Package with CTI > 600

  • AlSiC base plate for increased thermal cycling capability

  • Extended storage temperature down to Tstg = -55°C



FZ250R65KE3NPSA1 Applications


  • Traction drives

  • Medium voltage converters

  • As a switch


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