FZ2400R12HE4B9NPSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Case Connection :

Isolated

IGBT Type :

Trench Field Stop

Current - Collector Cutoff (Max) :

5 mA

Number of Elements :

3

Maximum Collector-Emitter Voltage (V) :

1200

Package Shape :

RECTANGULAR

Configuration :

Triple

Series :

-

Manufacturer :

Infineon Technologies AG

Supplier Device Package :

-

Transistor Application :

POWER CONTROL

Pin Count :

9

Product Status :

Active

Terminal Form :

UNSPECIFIED

Supplier Package :

IHMB190-2

Mounting :

Screw

NTC Thermistor :

No

Package Length :

190

Channel Type :

N

Input Capacitance (Cies) @ Vce :

150 nF @ 25 V

Surface Mount :

No

Mounting Type :

Chassis Mount

Voltage - Collector Emitter Breakdown (Max) :

1200 V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 2.4kA

JESD-30 Code :

R-PUFM-X9

Maximum Power Dissipation (mW) :

13500000

ECCN (US) :

EAR99

Collector Emitter Saturation Voltage :

1.75

Polarity/Channel Type :

N-Channel

Continuous Collector Current :

3.56

Military :

No

Power - Max :

13.5 kW

Input :

Standard

Maximum Continuous Collector Current (A) :

3560

Collector-Emitter Voltage-Max :

1200 V

Number of Terminals :

9

Maximum Gate Emitter Voltage (V) :

±20

Additional Feature :

UL APPROVED

Factory Lead Time :

1 Week

Package / Case :

Module

Maximum Operating Temperature (°C) :

150

Operating Temperature :

-40°C ~ 150°C (TJ)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

RoHS Status :

RoHS non-compliant

Package Width :

140

Terminal Position :

UPPER

Power Dissipation :

13.5

Packaging :

Tray

Typical Collector Emitter Saturation Voltage (V) :

1.75

PCB changed :

9

Collector Current-Max (IC) :

3560 A

Maximum Gate Emitter Leakage Current (uA) :

0.4

Current - Collector (Ic) (Max) :

3.56 kA

Package :

Bulk

Minimum Operating Temperature (°C) :

-40