FZ1200R33KF2CB3S2NDSA1
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- Mfr.Part #
- FZ1200R33KF2CB3S2NDSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 3300V 2000A
- Stock
- 34,952
- In Stock ：
- 34,952
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Vce(on) (Max) @ Vge, Ic :
- 4.25V @ 15V, 1.2kA
- Power - Max :
- 14500W
- Voltage - Collector Emitter Breakdown (Max) :
- 3300V
- Configuration :
- Full Bridge
- NTC Thermistor :
- No
- Operating Temperature :
- -40°C~125°C
- Current - Collector (Ic) (Max) :
- 2000A
- Current - Collector Cutoff (Max) :
- 12mA
- Package / Case :
- Module
- Input :
- Standard
- Input Capacitance (Cies) @ Vce :
- 150nF @ 25V
- Mounting Type :
- Chassis Mount
- Datasheets
- FZ1200R33KF2CB3S2NDSA1
FZ1200R33KF2CB3S2NDSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FZ1200R33KF2CB3S2NDSA1 Description
FZ1200R33KF2CB3S2NDSA1 is a 3300v IGBT-Modules. The FZ1200R33KF2CB3S2NDSA1 can be applied in Automotive, Infotainment & cluster, Communications equipment, Broadband fixed line access, Personal electronics, and Connected peripherals & printers applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FZ1200R33KF2CB3S2NDSA1 is in the tray package with 14kW Power dissipation.
FZ1200R33KF2CB3S2NDSA1 Features
Collector-emitter voltage Tvj = 25°C: 1600v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 45A
Repetitive peak collector current Tp = 1 ms: 50A
Total power dissipation Tc = 25°C, Tvj max = 150: 230W
Gate-emitter peak voltage: ±20V
FZ1200R33KF2CB3S2NDSA1 Applications
Automotive
Infotainment & cluster
Communications equipment
Broadband fixed line access
Personal electronics
Connected peripherals & printers
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