FZ1200R33HE3BPSA1

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Mfr.Part #
FZ1200R33HE3BPSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MODULE 3300V 1200A
Stock
13,349
In Stock :
13,349

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
JESD-30 Code :
R-XUFM-X3
Number of Elements :
3
Halogen Free :
Not Halogen Free
Input :
Standard
Polarity/Channel Type :
N-Channel
Mounting Type :
Chassis Mount
Terminal Form :
UNSPECIFIED
RoHS Status :
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max) :
3300V
Current - Collector (Ic) (Max) :
1200A
Turn Off Time-Nom (toff) :
3550 ns
Input Capacitance (Cies) @ Vce :
210nF @ 25V
Surface Mount :
No
Vce(on) (Max) @ Vge, Ic :
3.2V @ 15V, 1200A
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
5mA
Published :
2002
Transistor Element Material :
SILICON
IGBT Type :
Trench Field Stop
Package / Case :
Module
Transistor Application :
POWER CONTROL
Number of Terminations :
3
Power - Max :
13000W
Configuration :
Full Bridge
Turn On Time :
1150 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead
Case Connection :
Isolated
Operating Temperature :
-40°C~150°C
Terminal Position :
UPPER
NTC Thermistor :
No
Datasheets
FZ1200R33HE3BPSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FZ1200R33HE3BPSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:Module, Number of Terminations:3, Operating Temperature:-40°C~150°C, FZ1200R33HE3BPSA1 pinout, FZ1200R33HE3BPSA1 datasheet PDF, FZ1200R33HE3BPSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FZ1200R33HE3BPSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FZ1200R33HE3BPSA1


FZ1200R33HE3BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FZ1200R33HE3BPSA1                            Description

 

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.



FZ1200R33HE3BPSA1                            Features

? Electrical features

- VCES = 3300 V

- IC nom = 1200 A / ICRM = 2400 A

- Unbeatable robustness

- High DC stability

- High short-circuit capability

- Low switching losses

- Low VCE,sat

- Tvj,op = 150°C

- VCE,sat with positive temperature coefficient

? Mechanical features

- AlSiC base plate for increased thermal cycling capability

- Package with CTI > 600

- IHM B housing

- Isolated base plate

 

FZ1200R33HE3BPSA1                            A pplications

? Chopper applications

? Medium-voltage converters

? Motor drives

? Traction drives

? UPS systems

? Wind turbines

 


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