FSB749
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- Mfr.Part #
- FSB749
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 3A SOT23-3
- Stock
- 5,509
- In Stock ：
- 5,509
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 500mW
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 25V
- Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Length :
- 2.92mm
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -35V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Current Rating :
- -3A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Qualification Status :
- Not Qualified
- Published :
- 2008
- JESD-609 Code :
- e3
- Factory Lead Time :
- 20 Weeks
- Polarity/Channel Type :
- PNP
- Base Part Number :
- FSB749
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- Height :
- 940μm
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 300mA, 3A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 500mW
- Weight :
- 30mg
- Max Collector Current :
- 3A
- Collector Emitter Saturation Voltage :
- 600mV
- Voltage - Rated DC :
- -25V
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- hFE Min :
- 100
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- FSB749
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB749 Overview
This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 600mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 3A volts.
FSB749 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 100MHz
FSB749 Applications
There are a lot of ON Semiconductor
FSB749 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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