FSB560
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- Mfr.Part #
- FSB560
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A SOT23-3
- Stock
- 30,448
- In Stock ：
- 30,448
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 500mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 75MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 100
- Voltage - Rated DC :
- 60V
- Frequency :
- 75MHz
- Width :
- 1.4mm
- Max Power Dissipation :
- 500mW
- Base Part Number :
- FSB560
- Height :
- 940μm
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transition Frequency :
- 75MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 350mV
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Max Collector Current :
- 2A
- Max Breakdown Voltage :
- 60V
- Terminal Position :
- Dual
- Weight :
- 30mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Published :
- 2008
- Current Rating :
- 2A
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Length :
- 2.92mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FSB560
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB560 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 500mA 2V DC current gain.As it features a collector emitter saturation voltage of 350mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 75MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 2A volts.
FSB560 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz
FSB560 Applications
There are a lot of ON Semiconductor
FSB560 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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