FS75R12KE3_B3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Case Connection :

Isolated

VCEsat-Max :

2.15 V

Mount :

Screw

IGBT Type :

NPT

Number of Pins :

36

Terminal Finish :

TIN LEAD

Power Dissipation-Max (Abs) :

355W

Number of Elements :

6

Gate-Emitter Voltage-Max :

20V

Configuration :

Three Phase Inverter

Power - Max :

355W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 75A

Mounting Type :

Chassis Mount

JESD-609 Code :

e0

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Terminal Position :

UPPER

Number of Terminations :

34

Collector Emitter Voltage (VCEO) :

1.2kV

Voltage - Collector Emitter Breakdown (Max) :

1200V

Input :

Standard

Pin Count :

34

NTC Thermistor :

yes

Package / Case :

Module

JESD-30 Code :

R-XUFM-X34

Input Capacitance (Cies) @ Vce :

5.3nF @ 25V

RoHS Status :

RoHS Compliant

Max Collector Current :

100A

ECCN Code :

EAR99

Turn On Time :

340 ns

Turn Off Time-Nom (toff) :

610 ns

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

5mA

Terminal Form :

UNSPECIFIED