FS500R17OE4DB81BPSA1

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Mfr.Part #
FS500R17OE4DB81BPSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
MEDIUM POWER ECONO
Stock
4
In Stock :
4

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Continuous Collector Current :
500A
Minimum Operating Temperature :
- 40 C
Technology :
Si
Voltage - Collector Emitter Breakdown (Max) :
1700 V
Configuration :
Three Phase Inverter
Manufacturer :
Infineon
Packaging :
Tray
Current - Collector (Ic) (Max) :
500 A
Maximum Operating Temperature :
+ 150 C
Current - Collector Cutoff (Max) :
3 mA
Product Category :
IGBT Modules
RoHS :
Details
Subcategory :
IGBTs
Series :
EconoPACK?+
Package :
Tray
Tradename :
TRENCHSTOP EconoPACK PressFIT
Product Status :
Active
IGBT Type :
Trench Field Stop
Input Capacitance (Cies) @ Vce :
40 nF @ 25 V
Product :
IGBT Silicon Modules
Collector Emitter Saturation Voltage :
1.95V
Power - Max :
20 mW
NTC Thermistor :
yes
Mounting Type :
Chassis Mount
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 500A
Package / Case :
Module
Base Product Number :
FS500R17
Product Type :
IGBT Modules
Input :
Standard
Brand :
Infineon Technologies
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Style :
Screw
Power Dissipation :
-
Supplier Device Package :
AG-ECONOPP
Introducing Transistors - IGBTs - Modules Infineon Technologies FS500R17OE4DB81BPSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:Module, Operating Temperature:-40°C ~ 150°C (TJ), FS500R17OE4DB81BPSA1 pinout, FS500R17OE4DB81BPSA1 datasheet PDF, FS500R17OE4DB81BPSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FS500R17OE4DB81BPSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FS500R17OE4DB81BPSA1


FS500R17OE4DB81BPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

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