FQU8P10TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

20 ns

Published :

2013

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Current Rating :

-6.7A

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

6.6A

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Rds On (Max) @ Id, Vgs :

530m Ω @ 3.3A, 10V

Rise Time :

110ns

Weight :

343.08mg

Power Dissipation-Max :

2.5W Ta 44W Tc

Number of Terminations :

3

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

Number of Elements :

1

Drain to Source Breakdown Voltage :

-100V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Mount :

Through Hole

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Voltage - Rated DC :

-100V

Drain to Source Voltage (Vdss) :

100V

FET Type :

P-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

26.4A

JESD-609 Code :

e3

JESD-30 Code :

R-PSIP-T3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Drain-source On Resistance-Max :

0.53Ohm

Fall Time (Typ) :

35 ns