FQU8P10TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Drain to Source Voltage (Vdss) :

100V

Current Rating :

-6.7A

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Weight :

343.08mg

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

-100V

FET Type :

P-Channel

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-100V

JESD-30 Code :

R-PSIP-T3

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

110ns

Continuous Drain Current (ID) :

6.6A

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

20 ns

Mount :

Through Hole

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

530m Ω @ 3.3A, 10V

Power Dissipation-Max :

2.5W Ta 44W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2013

Factory Lead Time :

4 Weeks

Fall Time (Typ) :

35 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

26.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Power Dissipation :

2.5W

Drain-source On Resistance-Max :

0.53Ohm

Pbfree Code :

yes

Packaging :

Tube