FQU8N25TU

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Mfr.Part #
FQU8N25TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 250V 6.2A IPAK
Stock
5,629
In Stock :
5,629

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
MATTE TIN
Pbfree Code :
yes
Reach Compliance Code :
Unknown
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Series :
QFET®
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Mounting Type :
Through Hole
Surface Mount :
No
Number of Elements :
1
DS Breakdown Voltage-Min :
250V
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
6.2A Tc
JESD-30 Code :
R-PSIP-T3
Pin Count :
3
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
250V
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
120 mJ
Qualification Status :
COMMERCIAL
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
550m Ω @ 3.1A, 10V
Packaging :
Tube
Peak Reflow Temperature (Cel) :
Not Applicable
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
2.5W Ta 50W Tc
Vgs(th) (Max) @ Id :
5V @ 250μA
Pulsed Drain Current-Max (IDM) :
24.8A
Drain Current-Max (Abs) (ID) :
6.2A
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
530pF @ 25V
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.55Ohm
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
FQU8N25TU
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQU8N25TU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, FQU8N25TU pinout, FQU8N25TU datasheet PDF, FQU8N25TU amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQU8N25TU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQU8N25TU


N-Channel Tube 550m Ω @ 3.1A, 10V ±30V 530pF @ 25V 15nC @ 10V 250V TO-251-3 Short Leads, IPak, TO-251AA

FQU8N25TU Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 120 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 530pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 6.2A.Peak drain current is 24.8A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FQU8N25TU Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 24.8A.
a 250V drain to source voltage (Vdss)


FQU8N25TU Applications


There are a lot of Rochester Electronics, LLC
FQU8N25TU applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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