FQU8N25TU
- Mfr.Part #
- FQU8N25TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 6.2A IPAK
- Stock
- 5,629
- In Stock :
- 5,629
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- MATTE TIN
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Series :
- QFET®
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 250V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6.2A Tc
- JESD-30 Code :
- R-PSIP-T3
- Pin Count :
- 3
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Qualification Status :
- COMMERCIAL
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 3.1A, 10V
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 24.8A
- Drain Current-Max (Abs) (ID) :
- 6.2A
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 530pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.55Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- FQU8N25TU

N-Channel Tube 550m Ω @ 3.1A, 10V ±30V 530pF @ 25V 15nC @ 10V 250V TO-251-3 Short Leads, IPak, TO-251AA
FQU8N25TU Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 120 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 530pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 6.2A.Peak drain current is 24.8A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQU8N25TU Features
the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 24.8A.
a 250V drain to source voltage (Vdss)
FQU8N25TU Applications
There are a lot of Rochester Electronics, LLC
FQU8N25TU applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FQU8N25TU | Fairchild Semiconductor | 5,629 | MOSFET N-CH 250V 6.2A IPAK |
| FQU8P10TU | Fairchild Semiconductor | 41,846 | MOSFET P-CH 100V 6.6A IPAK |
















