FQU8N25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Series :

QFET®

Drain Current-Max (Abs) (ID) :

6.2A

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

120 mJ

Terminal Position :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

250V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Surface Mount :

No

Drain-source On Resistance-Max :

0.55Ohm

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

24.8A

Rds On (Max) @ Id, Vgs :

550m Ω @ 3.1A, 10V

Number of Terminations :

3

Packaging :

Tube

Peak Reflow Temperature (Cel) :

Not Applicable

Power Dissipation-Max :

2.5W Ta 50W Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)