FQU5P20TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

-200V

Lead Free :

Lead Free

Width :

2.5mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time :

70ns

Weight :

343.08mg

Current - Continuous Drain (Id) @ 25°C :

3.7A Tc

Series :

QFET®

Resistance :

1.4Ohm

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.85A, 10V

Number of Pins :

3

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Length :

6.8mm

Factory Lead Time :

4 Weeks

FET Type :

P-Channel

Power Dissipation-Max :

2.5W Ta 45W Tc

ECCN Code :

EAR99

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Fall Time (Typ) :

25 ns

Current Rating :

-3.7A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Continuous Drain Current (ID) :

3.7A

Number of Terminations :

3

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

JESD-609 Code :

e3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

12 ns

Voltage - Rated DC :

-200V

Published :

2013

Power Dissipation :

2.5W

Turn On Delay Time :

9 ns

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

200V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

7.57mm