FQU5N40TU
- Mfr.Part #
- FQU5N40TU
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 3.4A IPAK
- Stock
- 12,804
- In Stock :
- 12,804
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Element Configuration :
- Single
- Power Dissipation :
- 2.5W
- Turn-Off Delay Time :
- 20 ns
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Rise Time :
- 60ns
- Pbfree Code :
- yes
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Tc
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 400V
- JESD-609 Code :
- e3
- Current Rating :
- 3.4A
- Continuous Drain Current (ID) :
- 3.4A
- Number of Pins :
- 3
- Voltage - Rated DC :
- 400V
- Length :
- 6.6mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Series :
- QFET®
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.3mm
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Packaging :
- Tube
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 343.08mg
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Height :
- 6.1mm
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Published :
- 2000
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 1.7A, 10V
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 30 ns
- Datasheets
- FQU5N40TU

N-Channel Tube 1.6 Ω @ 1.7A, 10V ±30V 460pF @ 25V 13nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
FQU5N40TU Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 290 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 460pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQU5N40TU Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 3.4A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
FQU5N40TU Applications
There are a lot of ON Semiconductor
FQU5N40TU applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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