FQU5N60CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

38 ns

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Power Dissipation-Max :

2.5W Ta 49W Tc

Current Rating :

5A

Radiation Hardening :

No

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

46 ns

Voltage - Rated DC :

600V

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.8A

Packaging :

Tube

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Lead Free :

Lead Free

Mount :

Through Hole

Power Dissipation :

2.5W

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

4 Weeks

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Weight :

343.08mg

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drain to Source Breakdown Voltage :

600V

Resistance :

2.5Ohm

Number of Elements :

1

Rise Time :

42ns

JESD-609 Code :

e3

Published :

2013

Element Configuration :

Single

Turn On Delay Time :

10 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Terminations :

3