FQT4N20TF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Terminal Finish :

NOT SPECIFIED

DS Breakdown Voltage-Min :

200V

Vgs(th) (Max) @ Id :

5V @ 250μA

Surface Mount :

yes

Power Dissipation-Max :

2.2W Tc

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

850mA Tc

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-261-4, TO-261AA

Pulsed Drain Current-Max (IDM) :

3.4A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

52 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.85A

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 425mA, 10V