FQT4N20LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

15 ns

Terminal Form :

Gull wing

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 425mA, 10V

Rise Time :

70ns

Drain Current-Max (Abs) (ID) :

0.85A

Case Connection :

DRAIN

Resistance :

1.35Ohm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation :

2.2W

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Threshold Voltage :

2V

Drain to Source Breakdown Voltage :

200V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PDSO-G4

Continuous Drain Current (ID) :

850mA

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

40 ns

Element Configuration :

Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

52 mJ

Vgs (Max) :

±20V

Contact Plating :

Tin

Published :

2001

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Position :

Dual

Number of Pins :

3

Reach Compliance Code :

not_compliant

Voltage - Rated DC :

200V

Height :

1.6mm

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

18 Weeks

Width :

3.56mm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Turn On Delay Time :

7 ns

Package / Case :

TO-261-4, TO-261AA

Weight :

188mg

Power Dissipation-Max :

2.2W Tc

Length :

6.5mm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

850mA Tc

Pbfree Code :

yes

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Current Rating :

850mA

Series :

QFET®

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Operating Mode :

ENHANCEMENT MODE