FQT4N20TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 25V

Vgs (Max) :

±30V

Qualification Status :

COMMERCIAL

Terminal Finish :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

0.85A

DS Breakdown Voltage-Min :

200V

Power Dissipation-Max :

2.2W Tc

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

850mA Tc

Package / Case :

TO-261-4, TO-261AA

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Pulsed Drain Current-Max (IDM) :

3.4A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 425mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

5V @ 250μA

Avalanche Energy Rating (Eas) :

52 mJ

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Number of Elements :

1

Pbfree Code :

yes