FQS4901TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

25V

Rds On (Max) @ Id, Vgs :

4.2 Ω @ 225mA, 10V

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Terminal Form :

Gull wing

Rise Time :

20ns

Terminal Finish :

Tin (Sn)

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

0.45A

Turn On Delay Time :

5 ns

Turn-Off Delay Time :

20 ns

Current Rating :

450mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Lead Free :

Lead Free

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Voltage - Rated DC :

400V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Power Dissipation :

2W

Mount :

Surface Mount

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Fall Time (Typ) :

35 ns

Continuous Drain Current (ID) :

450mA

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Element Configuration :

Dual

Weight :

230.4mg

Number of Pins :

8

FET Feature :

Standard

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

400V

Resistance :

4.2Ohm

Base Part Number :

FQS4901

FET Technology :

METAL-OXIDE SEMICONDUCTOR