FQS4901TF
- Mfr.Part #
- FQS4901TF
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 400V 450MA 8SOIC
- Stock
- 9,900
- In Stock :
- 9,900
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain Current-Max (Abs) (ID) :
- 0.45A
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 20 ns
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 4.2Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 400V
- Weight :
- 230.4mg
- Number of Terminations :
- 8
- Series :
- QFET®
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ) :
- 35 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Threshold Voltage :
- 4V
- Number of Elements :
- 2
- Current Rating :
- 450mA
- Max Power Dissipation :
- 2W
- Power Dissipation :
- 2W
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- FET Type :
- 2 N-Channel (Dual)
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 25V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 450mA
- Voltage - Rated DC :
- 400V
- FET Feature :
- Standard
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- REACH SVHC :
- No SVHC
- Rise Time :
- 20ns
- Number of Pins :
- 8
- Turn On Delay Time :
- 5 ns
- Factory Lead Time :
- 4 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Base Part Number :
- FQS4901
- Element Configuration :
- Dual
- Rds On (Max) @ Id, Vgs :
- 4.2 Ω @ 225mA, 10V
- Terminal Form :
- Gull wing
- Datasheets
- FQS4901TF
FQS4901TF Documents

FQS4901TF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FQS4901TF Description
This N-channel enhanced power MOSFET is produced using Fairchild's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specially tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy. Power. These devices are suitable for switching mode power supplies. Active power factor correction (PFC). And electronic light ballasts.
FQS4901TF Features
·0.45A,400V RpS(on)=4.2Ω(Max.)@VGs=10Vlp=0.225A
·Low Gate Charge(Typ.5.8nC)
·Low Css(Typ.5pF)
100% Avalanche Tested
FQS4901TF Applications
switching mode power supplies
Active power factor correction (PFC)
electronic light ballasts
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