FQS4900TF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

60V 300V

Number of Pins :

8

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Weight :

230.4mg

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rise Time :

25ns

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

35 ns

Series :

QFET®

Transistor Element Material :

SILICON

Power Dissipation :

2W

Published :

2002

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

1.3A 300mA

Vgs(th) (Max) @ Id :

1.95V @ 20mA

Drain to Source Breakdown Voltage :

-300V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.3A

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Fall Time (Typ) :

47 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

550m Ω @ 650mA, 10V

Number of Elements :

2

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 5V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drain-source On Resistance-Max :

0.65Ohm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Base Part Number :

FQS4900

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

5.2A

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

2W

Packaging :

Tape and Reel (TR)