FQA8N90C-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

110ns

Package / Case :

TO-3P-3, SC-65-3

Turn-Off Delay Time :

70 ns

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 4A, 10V

Mounting Type :

Through Hole

Weight :

6.401g

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Elements :

1

Avalanche Energy Rating (Eas) :

850 mJ

Fall Time (Typ) :

70 ns

Packaging :

Tube

Power Dissipation-Max :

240W Tc

Current - Continuous Drain (Id) @ 25°C :

8A Tc

JESD-609 Code :

e3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

8A

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 25V

Number of Pins :

3

Turn On Delay Time :

40 ns

Series :

QFET®

Number of Terminations :

3

Continuous Drain Current (ID) :

8A

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

900V

Terminal Finish :

MATTE TIN

Mount :

Through Hole

Power Dissipation :

240W