FQA8N90C-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

8A

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

3

Transistor Element Material :

SILICON

Power Dissipation :

240W

Series :

QFET®

Mount :

Through Hole

JESD-609 Code :

e3

Weight :

6.401g

Drain to Source Breakdown Voltage :

900V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

850 mJ

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-3P-3, SC-65-3

Transistor Application :

SWITCHING

Packaging :

Tube

Turn On Delay Time :

40 ns

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Radiation Hardening :

No

Fall Time (Typ) :

70 ns

Rise Time :

110ns

Power Dissipation-Max :

240W Tc

Continuous Drain Current (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

2080pF @ 25V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Vgs (Max) :

±30V

Turn-Off Delay Time :

70 ns

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Factory Lead Time :

4 Weeks