FQA8N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

900V

Reach Compliance Code :

Unknown

Terminal Position :

Single

Number of Elements :

1

Power Dissipation-Max :

240W Tc

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 4A, 10V

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

900V

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Peak Reflow Temperature (Cel) :

Not Applicable

Transistor Application :

SWITCHING

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

32A

Packaging :

Tube

Avalanche Energy Rating (Eas) :

850 mJ

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Transistor Element Material :

SILICON

Package / Case :

TO-3P-3, SC-65-3

Drain Current-Max (Abs) (ID) :

8A

Input Capacitance (Ciss) (Max) @ Vds :

2.08pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3