FQA8N100C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

6 Weeks

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Pbfree Code :

yes

Published :

2005

Series :

QFET®

Resistance :

1.45Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

1kV

Height :

18.9mm

JESD-609 Code :

e3

Power Dissipation :

225W

Voltage - Rated DC :

1kV

Drain Current-Max (Abs) (ID) :

8A

Turn-Off Delay Time :

122 ns

Fall Time (Typ) :

80 ns

Power Dissipation-Max :

225W Tc

Number of Terminations :

3

Current Rating :

8A

Rise Time :

95ns

Lead Free :

Lead Free

Length :

15.8mm

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

1.45 Ω @ 4A, 10V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

850 mJ

Element Configuration :

Single

Additional Feature :

FAST SWITCHING

Transistor Application :

SWITCHING

Threshold Voltage :

5V

Turn On Delay Time :

50 ns

Mount :

Through Hole

Width :

5mm

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Weight :

6.401g

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Package / Case :

TO-3P-3, SC-65-3

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

1000V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified