FQA8N100C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Length :

15.8mm

Power Dissipation :

225W

Turn-Off Delay Time :

122 ns

Turn On Delay Time :

50 ns

Rds On (Max) @ Id, Vgs :

1.45 Ω @ 4A, 10V

Factory Lead Time :

6 Weeks

Drain to Source Breakdown Voltage :

1kV

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

225W Tc

Mounting Type :

Through Hole

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Weight :

6.401g

Published :

2005

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

1000V

Drain Current-Max (Abs) (ID) :

8A

Fall Time (Typ) :

80 ns

Resistance :

1.45Ohm

Width :

5mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Number of Terminations :

3

Additional Feature :

FAST SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-3P-3, SC-65-3

Avalanche Energy Rating (Eas) :

850 mJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

FET Type :

N-Channel

Current Rating :

8A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

8A

Qualification Status :

Not Qualified

Vgs (Max) :

±30V

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Packaging :

Tube

JESD-609 Code :

e3

Rise Time :

95ns

REACH SVHC :

No SVHC

Threshold Voltage :

5V

Vgs(th) (Max) @ Id :

5V @ 250μA

Voltage - Rated DC :

1kV

Height :

18.9mm