FQA8N100C

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Mfr.Part #
FQA8N100C
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 1000V 8A TO3PN
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
8A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
6 Weeks
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Pbfree Code :
yes
Published :
2005
Series :
QFET®
Resistance :
1.45Ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
1kV
Height :
18.9mm
JESD-609 Code :
e3
Power Dissipation :
225W
Voltage - Rated DC :
1kV
Drain Current-Max (Abs) (ID) :
8A
Turn-Off Delay Time :
122 ns
Fall Time (Typ) :
80 ns
Power Dissipation-Max :
225W Tc
Number of Terminations :
3
Current Rating :
8A
Rise Time :
95ns
Lead Free :
Lead Free
Length :
15.8mm
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Terminal Finish :
Tin (Sn)
Rds On (Max) @ Id, Vgs :
1.45 Ω @ 4A, 10V
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
850 mJ
Element Configuration :
Single
Additional Feature :
FAST SWITCHING
Transistor Application :
SWITCHING
Threshold Voltage :
5V
Turn On Delay Time :
50 ns
Mount :
Through Hole
Width :
5mm
REACH SVHC :
No SVHC
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Weight :
6.401g
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Pins :
3
Package / Case :
TO-3P-3, SC-65-3
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
1000V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
3220pF @ 25V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Vgs (Max) :
±30V
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Datasheets
FQA8N100C
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA8N100C from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, FQA8N100C pinout, FQA8N100C datasheet PDF, FQA8N100C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA8N100C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA8N100C


N-Channel Tube 1.45 Ω @ 4A, 10V ±30V 3220pF @ 25V 70nC @ 10V 1000V TO-3P-3, SC-65-3

FQA8N100C Description

The FQA8N100C is an N-Channel enhancement mode power MOSFET with DMOS technology and a patented planar stripe. This FQA8N100C advanced MOSFET technology was specifically designed to lower on-state resistance while also providing improved switching performance and high avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all applications for the FQA8N100C.


FQA8N100C Features

  • 8A, 1000V, RDS(on) = 1.45Ω(Max.) @VGS = 10 V, ID = 4A

  • Low gate charge ( Typ. 53nC)

  • Low Crss ( Typ. 16pF)

  • 100% avalanche tested


FQA8N100C Applications

  • Uninterruptible Power Supply

  • Other Industrial

  • Switched-mode power supplies

  • Active power factor correction (PFC

  • Electronic lamp ballasts


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