FQA8N100C
- Mfr.Part #
- FQA8N100C
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 8A TO3PN
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 225W
- Package / Case :
- TO-3P-3, SC-65-3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 1kV
- Published :
- 2005
- Continuous Drain Current (ID) :
- 8A
- Series :
- QFET®
- Fall Time (Typ) :
- 80 ns
- Rds On (Max) @ Id, Vgs :
- 1.45 Ω @ 4A, 10V
- REACH SVHC :
- No SVHC
- Current Rating :
- 8A
- Power Dissipation-Max :
- 225W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Drain to Source Voltage (Vdss) :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Drain to Source Breakdown Voltage :
- 1kV
- Turn On Delay Time :
- 50 ns
- Rise Time :
- 95ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 850 mJ
- Number of Elements :
- 1
- Additional Feature :
- FAST SWITCHING
- Width :
- 5mm
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 122 ns
- Drain Current-Max (Abs) (ID) :
- 8A
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3220pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Mount :
- Through Hole
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Weight :
- 6.401g
- Resistance :
- 1.45Ohm
- Length :
- 15.8mm
- Threshold Voltage :
- 5V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Height :
- 18.9mm
- Datasheets
- FQA8N100C

N-Channel Tube 1.45 Ω @ 4A, 10V ±30V 3220pF @ 25V 70nC @ 10V 1000V TO-3P-3, SC-65-3
FQA8N100C Description
The FQA8N100C is an N-Channel enhancement mode power MOSFET with DMOS technology and a patented planar stripe. This FQA8N100C advanced MOSFET technology was specifically designed to lower on-state resistance while also providing improved switching performance and high avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all applications for the FQA8N100C.
FQA8N100C Features
-
8A, 1000V, RDS(on) = 1.45Ω(Max.) @VGS = 10 V, ID = 4A
-
Low gate charge ( Typ. 53nC)
-
Low Crss ( Typ. 16pF)
-
100% avalanche tested
FQA8N100C Applications
-
Uninterruptible Power Supply
-
Other Industrial
-
Switched-mode power supplies
-
Active power factor correction (PFC
-
Electronic lamp ballasts
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