FQA5N90

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Avalanche Energy Rating (Eas) :

660 mJ

Drain Current-Max (Abs) (ID) :

5.8A

Package / Case :

TO-3P-3, SC-65-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Power Dissipation-Max :

185W Tc

Number of Elements :

1

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

23.2A

Transistor Element Material :

SILICON

Terminal Finish :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Packaging :

Tube

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

900V

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1.55pF @ 25V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

900V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 2.9A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant