FQA5N90
- Mfr.Part #
- FQA5N90
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 5.8A TO3P
- Stock
- 5,883
- In Stock :
- 5,883
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 23.2A
- Rds On (Max) @ Id, Vgs :
- 2.3 Ω @ 2.9A, 10V
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 900V
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 185W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- QFET®
- Drain Current-Max (Abs) (ID) :
- 5.8A
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A Tc
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 900V
- Number of Terminations :
- 3
- Terminal Finish :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Qualification Status :
- COMMERCIAL
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.55pF @ 25V
- Package / Case :
- TO-3P-3, SC-65-3
- Avalanche Energy Rating (Eas) :
- 660 mJ
- Datasheets
- FQA5N90

N-Channel Tube 2.3 Ω @ 2.9A, 10V ±30V 1.55pF @ 25V 40nC @ 10V 900V TO-3P-3, SC-65-3
FQA5N90 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 660 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.55pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [5.8A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 23.2A.The DS breakdown voltage should be maintained above 900V to maintain normal operation.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQA5N90 Features
the avalanche energy rating (Eas) is 660 mJ
based on its rated peak drain current 23.2A.
a 900V drain to source voltage (Vdss)
FQA5N90 Applications
There are a lot of Rochester Electronics, LLC
FQA5N90 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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