FQA55N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

6.401g

Fall Time (Typ) :

250 ns

Height :

18.9mm

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

250V

Series :

QFET®

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Resistance :

40mOhm

Pbfree Code :

yes

Power Dissipation-Max :

310W Tc

Lead Free :

Lead Free

Mounting Type :

Through Hole

Published :

2000

Turn On Delay Time :

100 ns

Rds On (Max) @ Id, Vgs :

40m Ω @ 27.5A, 10V

Number of Terminations :

3

Current Rating :

55A

Voltage - Rated DC :

250V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Length :

15.8mm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

200 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

310W

Transistor Application :

SWITCHING

Width :

5mm

Factory Lead Time :

4 Weeks

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Continuous Drain Current (ID) :

55A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

FET Type :

N-Channel

Qualification Status :

Not Qualified

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Threshold Voltage :

5V

Element Configuration :

Single

Rise Time :

700ns

Pulsed Drain Current-Max (IDM) :

220A

Vgs (Max) :

±30V

Packaging :

Tube

Package / Case :

TO-3P-3, SC-65-3

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

6250pF @ 25V