FQA55N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

55A

Power Dissipation-Max :

310W Tc

Number of Elements :

1

Fall Time (Typ) :

250 ns

Weight :

6.401g

Mount :

Through Hole

Height :

18.9mm

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Width :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

6250pF @ 25V

Threshold Voltage :

5V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

250V

Number of Pins :

3

Pbfree Code :

yes

Turn On Delay Time :

100 ns

Factory Lead Time :

4 Weeks

Length :

15.8mm

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

ECCN Code :

EAR99

Current Rating :

55A

Pulsed Drain Current-Max (IDM) :

220A

Qualification Status :

Not Qualified

Power Dissipation :

310W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Series :

QFET®

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-3P-3, SC-65-3

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

200 ns

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

250V

Lead Free :

Lead Free

Resistance :

40mOhm

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

REACH SVHC :

No SVHC

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

40m Ω @ 27.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Element Configuration :

Single

Rise Time :

700ns