FQA55N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

JESD-609 Code :

e3

Power Dissipation-Max :

310W Tc

Length :

15.8mm

Resistance :

40mOhm

Input Capacitance (Ciss) (Max) @ Vds :

6250pF @ 25V

Qualification Status :

Not Qualified

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

4 Weeks

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

700ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Power Dissipation :

310W

Turn On Delay Time :

100 ns

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Number of Terminations :

3

Threshold Voltage :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Drain to Source Breakdown Voltage :

250V

Continuous Drain Current (ID) :

55A

Mount :

Through Hole

Width :

5mm

Height :

18.9mm

Current Rating :

55A

Package / Case :

TO-3P-3, SC-65-3

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Published :

2000

Weight :

6.401g

Pulsed Drain Current-Max (IDM) :

220A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

40m Ω @ 27.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Fall Time (Typ) :

250 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

200 ns

Voltage - Rated DC :

250V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)