FQA5N90

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Mfr.Part #
FQA5N90
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 900V 5.8A TO3P
Stock
5,883
In Stock :
5,883

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Surface Mount :
No
Reach Compliance Code :
Unknown
Terminal Finish :
NOT SPECIFIED
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
660 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Number of Terminations :
3
Pin Count :
3
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
2.3 Ω @ 2.9A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
900V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
900V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
185W Tc
Series :
QFET®
Input Capacitance (Ciss) (Max) @ Vds :
1.55pF @ 25V
Pbfree Code :
yes
Package / Case :
TO-3P-3, SC-65-3
Terminal Position :
Single
Vgs(th) (Max) @ Id :
5V @ 250μA
FET Type :
N-Channel
Packaging :
Tube
Qualification Status :
COMMERCIAL
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
5.8A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) :
5.8A
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
23.2A
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Datasheets
FQA5N90
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA5N90 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, FQA5N90 pinout, FQA5N90 datasheet PDF, FQA5N90 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA5N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA5N90


N-Channel Tube 2.3 Ω @ 2.9A, 10V ±30V 1.55pF @ 25V 40nC @ 10V 900V TO-3P-3, SC-65-3

FQA5N90 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 660 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.55pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [5.8A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 23.2A.The DS breakdown voltage should be maintained above 900V to maintain normal operation.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FQA5N90 Features


the avalanche energy rating (Eas) is 660 mJ
based on its rated peak drain current 23.2A.
a 900V drain to source voltage (Vdss)


FQA5N90 Applications


There are a lot of Rochester Electronics, LLC
FQA5N90 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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