FPN630
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- Mfr.Part #
- FPN630
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A TO226
- Stock
- 12,224
- In Stock ：
- 12,224
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Current - Collector (Ic) (Max) :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Mounting Type :
- Through Hole
- Power - Max :
- 1W
- Supplier Device Package :
- TO-226
- Transistor Type :
- PNP
- Frequency - Transition :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FPN630
PNP -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
FPN630 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
FPN630 Features
the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 300mV @ 100mA, 1A
the supplier device package of TO-226
FPN630 Applications
There are a lot of ON Semiconductor
FPN630 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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