FPN660A_D27Z
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- Mfr.Part #
- FPN660A_D27Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A TO226
- Stock
- 8,195
- In Stock ：
- 8,195
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-226
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 3A
- Frequency - Transition :
- 75MHz
- Power - Max :
- 1W
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- FPN660
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- Mounting Type :
- Through Hole
- Datasheets
- FPN660A_D27Z
PNP -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
FPN660A_D27Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 200mA, 2A.TO-226 is the supplier device package for this product.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
FPN660A_D27Z Features
the DC current gain for this device is 250 @ 500mA 2V
the vce saturation(Max) is 400mV @ 200mA, 2A
the supplier device package of TO-226
FPN660A_D27Z Applications
There are a lot of ON Semiconductor
FPN660A_D27Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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