FPF2G120BF07ASP
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- Mfr.Part #
- FPF2G120BF07ASP
- Manufacturer
- onsemi
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 650V 40A 156W F2
- Stock
- 70
- In Stock ：
- 70
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Modules
- Input :
- Standard
- Number of Pins :
- 17
- Pbfree Code :
- yes
- Max Power Dissipation :
- 156W
- Published :
- 2014
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- NTC Thermistor :
- yes
- Power - Max :
- 156W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 250μA
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 650V
- Operating Temperature :
- -40°C~150°C TJ
- Factory Lead Time :
- 46 Weeks
- Max Collector Current :
- 40A
- ECCN Code :
- EAR99
- Weight :
- 45g
- Mounting Type :
- Through Hole
- IGBT Type :
- Field Stop
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 40A
- Configuration :
- 3 Independent
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- Module
- Collector Emitter Voltage (VCEO) :
- 2.2V
- RoHS Status :
- ROHS3 Compliant
- Isolation Voltage :
- 2.5kV
- HTS Code :
- 8542.39.00.01
- Datasheets
- FPF2G120BF07ASP
FPF2G120BF07ASP datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available at
FPF2G120BF07ASP Description
The 3ch boost architecture of the FPF2G120BF07ASP offers an ideal option for the multi-string solar application. Additionally, the integrated SiC diodes and high-speed field-stop IGBTs offer lower conduction and switching losses. Additionally, the pre-applied PCM does not need to go through the printing procedure for the thermal interface material. The screw clamp also offers a dependable and quick installation option.
FPF2G120BF07ASP Features
? High Performance
? Minimal Switching and Conduction Losses
? IGBT High Speed Field Stop
? SBD for Boost Diode in SiC
? Internal NTC for Monitoring Temperature
FPF2G120BF07ASP Applications
Inverter solar
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