FP30R06KE3BOSA1

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Mfr.Part #
FP30R06KE3BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MODULE 600V 37A 125W
Stock
22,037
In Stock :
22,037

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Factory Lead Time :
12 Weeks
Qualification Status :
Not Qualified
Halogen Free :
Not Halogen Free
RoHS Status :
RoHS Compliant
Current - Collector Cutoff (Max) :
1mA
Terminal Form :
UNSPECIFIED
Turn Off Time-Nom (toff) :
750 ns
ECCN Code :
EAR99
Power - Max :
125W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
24
Number of Pins :
24
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 30A
Collector Emitter Voltage (VCEO) :
600V
Configuration :
Three Phase Inverter
Polarity/Channel Type :
N-Channel
Pin Count :
24
Input Capacitance (Cies) @ Vce :
1.65nF @ 25V
Width :
45mm
IGBT Type :
Trench Field Stop
Mount :
Screw
Input :
Standard
Turn On Time :
170 ns
Package / Case :
Module
Height :
17mm
Contact Plating :
Tin
NTC Thermistor :
yes
Mounting Type :
Chassis Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Position :
UPPER
Current - Collector (Ic) (Max) :
37A
Transistor Element Material :
SILICON
Published :
2002
Length :
107.5mm
Max Collector Current :
37A
Operating Temperature :
-40°C~150°C
Case Connection :
Isolated
Lead Free :
Contains Lead
Number of Elements :
7
Moisture Sensitivity Level (MSL) :
Not Applicable
Pbfree Code :
No
Datasheets
FP30R06KE3BOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FP30R06KE3BOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:24, Number of Pins:24, Package / Case:Module, Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C, FP30R06KE3BOSA1 pinout, FP30R06KE3BOSA1 datasheet PDF, FP30R06KE3BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FP30R06KE3BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FP30R06KE3BOSA1


FP30R06KE3BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FP30R06KE3BOSA1 Description

 

FP30R06KE3BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP30R06KE3BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FP30R06KE3BOSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FP30R06KE3BOSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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