FMMTA06TA
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- Mfr.Part #
- FMMTA06TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 15,729
- In Stock ：
- 15,729
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Weight :
- 7.994566mg
- Length :
- 3.05mm
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Elements :
- 1
- Published :
- 2006
- Max Power Dissipation :
- 330mW
- Qualification Status :
- Not Qualified
- Current Rating :
- 500mA
- Continuous Collector Current :
- 500mA
- Mount :
- Surface Mount
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Power Dissipation :
- 330mW
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Base Part Number :
- FMMTA06
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Reference Standard :
- CECC50002-240
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Width :
- 1.4mm
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 80V
- Packaging :
- Cut Tape (CT)
- Collector Emitter Breakdown Voltage :
- 80V
- Height :
- 1mm
- Datasheets
- FMMTA06TA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMTA06TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 500mA volts.
FMMTA06TA Features
the DC current gain for this device is 50 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
FMMTA06TA Applications
There are a lot of Diodes Incorporated
FMMTA06TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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