FMMT722TA
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- Mfr.Part #
- FMMT722TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 70V 1.5A SOT23-3
- Stock
- 2,409
- In Stock ：
- 2,409
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 200MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Continuous Collector Current :
- -1.5A
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Weight :
- 7.994566mg
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1.5A
- Element Configuration :
- Single
- Current Rating :
- -1.5A
- Transistor Type :
- PNP
- Length :
- 3.05mm
- Max Breakdown Voltage :
- 70V
- Gain Bandwidth Product :
- 200MHz
- Height :
- 1mm
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -70V
- Max Power Dissipation :
- 625mW
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 70V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 70V
- Width :
- 1.4mm
- Frequency :
- 200MHz
- Base Part Number :
- FMMT722
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 200mA, 1.5A
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 70V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Collector Emitter Saturation Voltage :
- -175mV
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Published :
- 2006
- Datasheets
- FMMT722TA
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT722TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -175mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 200mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at -1.5A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 70V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
FMMT722TA Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -175mV
the vce saturation(Max) is 260mV @ 200mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 200MHz
FMMT722TA Applications
There are a lot of Diodes Incorporated
FMMT722TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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