FMMT634TA
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- Mfr.Part #
- FMMT634TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 0.9A SOT23-3
- Stock
- 1,120
- In Stock ：
- 1,120
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 625mW
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Voltage - Rated DC :
- 100V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Saturation Voltage :
- 850mV
- Packaging :
- Cut Tape (CT)
- Pbfree Code :
- yes
- Published :
- 2006
- Max Junction Temperature (Tj) :
- 150°C
- Max Collector Current :
- 900mA
- Weight :
- 7.994566mg
- Pin Count :
- 3
- Polarity :
- NPN
- Frequency - Transition :
- 140MHz
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Height :
- 1.1mm
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 115V
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 900mA
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Mounting Type :
- Surface Mount
- Length :
- 3.05mm
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- FMMT634
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 120V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Transistor Type :
- NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 900mA
- Vce Saturation (Max) @ Ib, Ic :
- 960mV @ 5mA, 1A
- JESD-609 Code :
- e3
- Datasheets
- FMMT634TA
NPN - Darlington -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT634TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 850mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 960mV @ 5mA, 1A.Continuous collector voltages of 900mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Its current rating is 900mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 900mA volts.
FMMT634TA Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 960mV @ 5mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 900mA
FMMT634TA Applications
There are a lot of Diodes Incorporated
FMMT634TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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