FMMT625TA
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- Mfr.Part #
- FMMT625TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A SOT23-3
- Stock
- 36,753
- In Stock ：
- 36,753
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- FMMT625
- Voltage - Rated DC :
- 150V
- Collector Emitter Voltage (VCEO) :
- 150V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 135MHz
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1mm
- Number of Pins :
- 3
- Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 7.994566mg
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Max Breakdown Voltage :
- 150V
- Mount :
- Surface Mount
- Current Rating :
- 1A
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 135MHz
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 135MHz
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 150V
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 10V
- Pin Count :
- 3
- Continuous Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 180mV
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 625mW
- Contact Plating :
- Tin
- Datasheets
- FMMT625TA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT625TA Overview
In this device, the DC current gain is 300 @ 200mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 1A.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 135MHz.Input voltage breakdown is available at 150V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
FMMT625TA Features
the DC current gain for this device is 300 @ 200mA 10V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 135MHz
FMMT625TA Applications
There are a lot of Diodes Incorporated
FMMT625TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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