FMMT591TA
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- Mfr.Part #
- FMMT591TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT23-3
- Stock
- 4,525
- In Stock ：
- 4,525
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 500mW
- Continuous Collector Current :
- -1A
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Voltage - Rated DC :
- -60V
- Current Rating :
- -1A
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Height :
- 1.02mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 150MHz
- Weight :
- 7.994566mg
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 500mW
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Length :
- 3.04mm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -295mV
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 150MHz
- Width :
- 1.4mm
- Current - Collector Cutoff (Max) :
- 100nA
- Max Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2012
- Gain Bandwidth Product :
- 150MHz
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Base Part Number :
- FMMT591
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 100mA, 1A
- Datasheets
- FMMT591TA
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT591TA Overview
In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -295mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 100mA, 1A.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).150MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
FMMT591TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -295mV
the vce saturation(Max) is 350mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591TA Applications
There are a lot of Diodes Incorporated
FMMT591TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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