FMMT591ATA
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- Mfr.Part #
- FMMT591ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A SOT23-3
- Stock
- 2,279
- In Stock ：
- 2,279
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Current :
- 1A
- Continuous Collector Current :
- -1A
- Voltage - Rated DC :
- -40V
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Height :
- 1mm
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -500mV
- Number of Elements :
- 1
- Max Power Dissipation :
- 500mW
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 150MHz
- Weight :
- 7.994566mg
- Collector Base Voltage (VCBO) :
- 40V
- Packaging :
- Cut Tape (CT)
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Mount :
- Surface Mount
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 40V
- Width :
- 1.4mm
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 40V
- Power Dissipation :
- 500mW
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 5V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Current Rating :
- -1A
- Voltage :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 150MHz
- Base Part Number :
- FMMT591A
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 3.05mm
- Datasheets
- FMMT591ATA
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT591ATA Overview
This device has a DC current gain of 300 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 1A volts is possible.
FMMT591ATA Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT591ATA Applications
There are a lot of Diodes Incorporated
FMMT591ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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