FMMT555TC
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- Mfr.Part #
- FMMT555TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 1A SOT23-3
- Stock
- 2,603
- In Stock ：
- 2,603
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 500mW
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 1A
- HTS Code :
- 8541.21.00.95
- Current Rating :
- -1A
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Continuous Collector Current :
- -1A
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 300mV
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 300mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- -160V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 3mm
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -150V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.1mm
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Base Part Number :
- FMMT555
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Saturation Voltage :
- -300mV
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 150V
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Current - Collector (Ic) (Max) :
- 1A
- Factory Lead Time :
- 15 Weeks
- Datasheets
- FMMT555TC
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT555TC Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 300mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 10mA, 100mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.
FMMT555TC Features
the DC current gain for this device is 50 @ 300mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT555TC Applications
There are a lot of Diodes Incorporated
FMMT555TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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