FMMT555TA
- Mfr.Part #
- FMMT555TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 1A SOT23-3
- Stock
- 11,454
- In Stock :
- 11,454
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 150V
- Max Collector Current :
- 1A
- Continuous Collector Current :
- -1A
- Collector Emitter Voltage (VCEO) :
- 150V
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 300mA 10V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 150V
- Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Voltage - Rated DC :
- -150V
- Gain Bandwidth Product :
- 100MHz
- Height :
- 1.1mm
- Number of Terminations :
- 3
- hFE Min :
- 50
- Width :
- 1.4mm
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -350mV
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current Rating :
- -1A
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 100MHz
- Length :
- 3mm
- Collector Base Voltage (VCBO) :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- FMMT555
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Datasheets
- FMMT555TA

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT555TA Overview
In this device, the DC current gain is 50 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -350mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 150V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
FMMT555TA Features
the DC current gain for this device is 50 @ 300mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT555TA Applications
There are a lot of Diodes Incorporated
FMMT555TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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