FMMT555TA

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Mfr.Part #
FMMT555TA
Manufacturer
Diodes Incorporated
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 150V 1A SOT23-3
Stock
11,454
In Stock :
11,454

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
150V
Max Collector Current :
1A
Continuous Collector Current :
-1A
Collector Emitter Voltage (VCEO) :
150V
ECCN Code :
EAR99
Packaging :
Cut Tape (CT)
Factory Lead Time :
15 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 300mA 10V
Mount :
Surface Mount
Number of Pins :
3
Emitter Base Voltage (VEBO) :
-5V
Collector Emitter Breakdown Voltage :
150V
Power Dissipation :
500mW
Current - Collector Cutoff (Max) :
100nA ICBO
JESD-609 Code :
e3
Number of Elements :
1
Frequency :
100MHz
Voltage - Rated DC :
-150V
Gain Bandwidth Product :
100MHz
Height :
1.1mm
Number of Terminations :
3
hFE Min :
50
Width :
1.4mm
Published :
2006
Mounting Type :
Surface Mount
Polarity/Channel Type :
PNP
Collector Emitter Saturation Voltage :
-350mV
Transistor Application :
SWITCHING
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
40
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Terminal Position :
Dual
Lead Free :
Lead Free
Max Power Dissipation :
500mW
Transistor Element Material :
SILICON
Radiation Hardening :
No
Pin Count :
3
Terminal Finish :
Matte Tin (Sn) - annealed
Current Rating :
-1A
Weight :
7.994566mg
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transition Frequency :
100MHz
Length :
3mm
Collector Base Voltage (VCBO) :
160V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
FMMT555
Transistor Type :
PNP
REACH SVHC :
No SVHC
Termination :
SMD/SMT
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Datasheets
FMMT555TA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated FMMT555TA from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:FMMT555, FMMT555TA pinout, FMMT555TA datasheet PDF, FMMT555TA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated FMMT555TA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated FMMT555TA


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount

FMMT555TA Overview


In this device, the DC current gain is 50 @ 300mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -350mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 150V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

FMMT555TA Features


the DC current gain for this device is 50 @ 300mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz


FMMT555TA Applications


There are a lot of Diodes Incorporated
FMMT555TA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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