FMMT495TA
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- Mfr.Part #
- FMMT495TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 1A SOT23-3
- Stock
- 2,671
- In Stock ：
- 2,671
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Max Junction Temperature (Tj) :
- 150°C
- Max Collector Current :
- 1A
- Height :
- 1.1mm
- Continuous Collector Current :
- 1A
- Max Breakdown Voltage :
- 150V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 500mW
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 7V
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 170V
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- 300mV
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 150V
- Length :
- 3mm
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 250mA 10V
- Voltage - Rated DC :
- 150V
- Published :
- 2006
- Width :
- 1.4mm
- Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 150V
- Weight :
- 7.994566mg
- ECCN Code :
- EAR99
- Base Part Number :
- FMMT495
- Current Rating :
- 1A
- JESD-609 Code :
- e3
- Packaging :
- Cut Tape (CT)
- REACH SVHC :
- No SVHC
- Datasheets
- FMMT495TA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT495TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 250mA 10V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 1A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 150V volts.When collector current reaches its maximum, it can reach 1A volts.
FMMT495TA Features
the DC current gain for this device is 10 @ 250mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 1A
a transition frequency of 100MHz
FMMT495TA Applications
There are a lot of Diodes Incorporated
FMMT495TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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