FMMT494TC
- Mfr.Part #
- FMMT494TC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 1A SOT23-3
- Stock
- 2,688
- In Stock :
- 2,688
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.1mm
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Length :
- 3mm
- Element Configuration :
- Single
- Base Part Number :
- FMMT494
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 1A
- Published :
- 2012
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 140V
- Weight :
- 7.994566mg
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Number of Elements :
- 1
- Current Rating :
- 1A
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500mW
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 250mA 10V
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 120V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- FMMT494TC

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT494TC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 250mA 10V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
FMMT494TC Features
the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
FMMT494TC Applications
There are a lot of Diodes Incorporated
FMMT494TC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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