FMMT494TA
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- Mfr.Part #
- FMMT494TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 1A SOT23-3
- Stock
- 2,450
- In Stock ：
- 2,450
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 250mA 10V
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 120V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 140V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Cut Tape (CT)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 120V
- Collector Emitter Saturation Voltage :
- 300mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Continuous Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- 100mA
- Transition Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 120V
- Emitter Base Voltage (VEBO) :
- 7V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 7.994566mg
- Factory Lead Time :
- 15 Weeks
- Published :
- 2006
- Contact Plating :
- Tin
- Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- Max Power Dissipation :
- 500mW
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Length :
- 3mm
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Height :
- 1.1mm
- Base Part Number :
- FMMT494
- Voltage - Rated DC :
- 120V
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- FMMT494TA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT494TA Overview
This device has a DC current gain of 100 @ 250mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 120V volts can be used.A maximum collector current of 1A volts is possible.
FMMT494TA Features
the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 100MHz
FMMT494TA Applications
There are a lot of Diodes Incorporated
FMMT494TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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