FMMT493TA
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- Mfr.Part #
- FMMT493TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A SOT23-3
- Stock
- 5,218
- In Stock ：
- 5,218
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 100V
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Base Part Number :
- FMMT493
- Termination :
- SMD/SMT
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 120V
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 1A
- Packaging :
- Cut Tape (CT)
- Collector Emitter Saturation Voltage :
- 600mV
- Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Continuous Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Voltage - Rated DC :
- 60V
- Transistor Element Material :
- SILICON
- Current :
- 1A
- Length :
- 3mm
- Power Dissipation :
- 500mW
- Published :
- 2012
- Max Power Dissipation :
- 500mW
- Number of Pins :
- 3
- hFE Min :
- 100
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Weight :
- 7.994566mg
- Current Rating :
- 1A
- Height :
- 1.1mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 250mA 10V
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 100V
- Width :
- 1.4mm
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Gain Bandwidth Product :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Datasheets
- FMMT493TA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT493TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 250mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 1A volts.
FMMT493TA Features
the DC current gain for this device is 100 @ 250mA 10V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT493TA Applications
There are a lot of Diodes Incorporated
FMMT493TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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