FMMT493ATA
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- Mfr.Part #
- FMMT493ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 24,902
- In Stock ：
- 24,902
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 60V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 500mV
- Length :
- 3.05mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Continuous Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 7V
- Base Part Number :
- FMMT493A
- Packaging :
- Cut Tape (CT)
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA
- Power Dissipation :
- 500mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 500mW
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 60V
- Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Radiation Hardening :
- No
- Current Rating :
- 1A
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- hFE Min :
- 20
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 250mA 10V
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Collector Base Voltage (VCBO) :
- 120V
- Element Configuration :
- Single
- Height :
- 1.12mm
- Mount :
- Surface Mount
- Published :
- 2012
- Gain Bandwidth Product :
- 150MHz
- Max Breakdown Voltage :
- 60V
- Datasheets
- FMMT493ATA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT493ATA Overview
DC current gain in this device equals 300 @ 250mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.
FMMT493ATA Features
the DC current gain for this device is 300 @ 250mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT493ATA Applications
There are a lot of Diodes Incorporated
FMMT493ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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