FMMT489TA
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- Mfr.Part #
- FMMT489TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A SOT23-3
- Stock
- 39
- In Stock ：
- 39
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- Gain Bandwidth Product :
- 150MHz
- Lead Free :
- Lead Free
- Length :
- 3mm
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 50V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- Current Rating :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- JESD-609 Code :
- e3
- Base Part Number :
- FMMT489
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Packaging :
- Cut Tape (CT)
- Number of Pins :
- 3
- Continuous Collector Current :
- 1A
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 7.994566mg
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 500mW
- Collector Emitter Saturation Voltage :
- 600mV
- Max Power Dissipation :
- 500mW
- Width :
- 1.4mm
- Height :
- 1.1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 150MHz
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Datasheets
- FMMT489TA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT489TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1A volts.
FMMT489TA Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT489TA Applications
There are a lot of Diodes Incorporated
FMMT489TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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