FMMT455TA
- Mfr.Part #
- FMMT455TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 1A SOT23-3
- Stock
- 31,456
- In Stock :
- 31,456
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 140V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Base Part Number :
- FMMT455
- Width :
- 1.4mm
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 15mA, 150mA
- Lead Free :
- Lead Free
- Power Dissipation :
- 500mW
- Length :
- 3mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 140V
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 140V
- Transistor Type :
- NPN
- Published :
- 2006
- Packaging :
- Cut Tape (CT)
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Element Configuration :
- Single
- Max Power Dissipation :
- 500mW
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.1mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 160V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 700mV
- Current Rating :
- 2A
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 140V
- Datasheets
- FMMT455TA

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT455TA Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 15mA, 150mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 1A volts.
FMMT455TA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
FMMT455TA Applications
There are a lot of Diodes Incorporated
FMMT455TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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