FMMT451TA
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- Mfr.Part #
- FMMT451TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 321,917
- In Stock ：
- 321,917
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Base Part Number :
- FMMT451
- Continuous Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 150MHz
- Lead Free :
- Lead Free
- Published :
- 2006
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 350mV
- Current Rating :
- 1A
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Power Dissipation :
- 500mW
- Length :
- 3mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.4mm
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 500mW
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 150MHz
- Max Collector Current :
- 1A
- Packaging :
- Cut Tape (CT)
- Height :
- 1.1mm
- Frequency :
- 150MHz
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 150mA 10V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 15mA, 150mA
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FMMT451TA
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT451TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 350mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 350mV @ 15mA, 150mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
FMMT451TA Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FMMT451TA Applications
There are a lot of Diodes Incorporated
FMMT451TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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