FMG5AT148

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Radiation Hardening :

No

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power Dissipation :

300mW

Min Operating Temperature :

-55°C

Transition Frequency :

250MHz

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Collector Current :

100mA

Max Operating Temperature :

150°C

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Max Breakdown Voltage :

50V

Pin Count :

5

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lead Free :

Lead Free

hFE Min :

68

Continuous Collector Current :

100mA

Resistor - Base (R1) :

10k Ω

Package / Case :

SC-74A, SOT-753

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Current Rating :

100mA

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

250MHz

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G5

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN

Pbfree Code :

yes

Mounting Type :

Surface Mount

VCEsat-Max :

0.3 V

JESD-609 Code :

e1

Published :

2000

Max Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Resistor - Emitter Base (R2) :

47k Ω

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

300mV

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

*MG5

Voltage - Rated DC :

50V