FJV992FMTF
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- Mfr.Part #
- FJV992FMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A SOT23-3
- Stock
- 5,626
- In Stock ：
- 5,626
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 50mA
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Height :
- 1.04mm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 120V
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Weight :
- 30mg
- Power Dissipation :
- 300mW
- Published :
- 2004
- Voltage - Rated DC :
- -120V
- Factory Lead Time :
- 13 Weeks
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transition Frequency :
- 50MHz
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 50MHz
- Collector Base Voltage (VCBO) :
- -120V
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- hFE Min :
- 200
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1mA 6V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 120V
- Collector Emitter Saturation Voltage :
- -300mV
- Base Part Number :
- FJV992
- Terminal Form :
- Gull wing
- Width :
- 1.3mm
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- -50mA
- Pbfree Code :
- yes
- Frequency :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 120V
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Length :
- 2.9mm
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Datasheets
- FJV992FMTF
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV992FMTF Overview
This device has a DC current gain of 300 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 120V volts can be used.A maximum collector current of 50mA volts is possible.
FJV992FMTF Features
the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 50MHz
FJV992FMTF Applications
There are a lot of ON Semiconductor
FJV992FMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJV92MTF | onsemi | 27,173 | TRANS PNP 350V 0.5A SOT23-3 |
| FJV92MTF | onsemi | 37,347 | TRANS PNP 350V 0.5A SOT23-3 |
| FJV992PMTF | onsemi | 2,216 | TRANS PNP 120V 0.05A SOT23-3 |
| FJV992PMTF | onsemi | 2,216 | TRANS PNP 120V 0.05A SOT23-3 |
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