FJV992FMTF
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- Mfr.Part #
- FJV992FMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A SOT23-3
- Stock
- 5,626
- In Stock ：
- 5,626
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 13 Weeks
- Width :
- 1.3mm
- Max Power Dissipation :
- 300mW
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Type :
- PNP
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Frequency :
- 50MHz
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Current Rating :
- -50mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 50mA
- Transition Frequency :
- 50MHz
- Height :
- 1.04mm
- Mounting Type :
- Surface Mount
- Base Part Number :
- FJV992
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 50MHz
- Collector Base Voltage (VCBO) :
- -120V
- Element Configuration :
- Single
- Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 120V
- Collector Emitter Saturation Voltage :
- -300mV
- Collector Emitter Breakdown Voltage :
- 120V
- Voltage - Rated DC :
- -120V
- Published :
- 2004
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1mA 6V
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- hFE Min :
- 200
- Weight :
- 30mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FJV992FMTF
FJV992FMTF Documents
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV992FMTF Overview
This device has a DC current gain of 300 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 120V volts can be used.A maximum collector current of 50mA volts is possible.
FJV992FMTF Features
the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 50MHz
FJV992FMTF Applications
There are a lot of ON Semiconductor
FJV992FMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| FJV92MTF | onsemi | 27,173 | TRANS PNP 350V 0.5A SOT23-3 |
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| FJV992PMTF | onsemi | 2,216 | TRANS PNP 120V 0.05A SOT23-3 |
| FJV992PMTF | onsemi | 2,216 | TRANS PNP 120V 0.05A SOT23-3 |
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