FJV992FMTF
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- Mfr.Part #
- FJV992FMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A SOT23-3
- Stock
- 5,626
- In Stock ：
- 5,626
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1mA 6V
- Element Configuration :
- Single
- Base Part Number :
- FJV992
- Terminal Position :
- Dual
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Weight :
- 30mg
- Height :
- 1.04mm
- Collector Base Voltage (VCBO) :
- -120V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 300mW
- Published :
- 2004
- Gain Bandwidth Product :
- 50MHz
- Width :
- 1.3mm
- Collector Emitter Voltage (VCEO) :
- 120V
- hFE Min :
- 200
- Factory Lead Time :
- 13 Weeks
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 120V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -120V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -300mV
- Frequency :
- 50MHz
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- -5V
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Max Collector Current :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Number of Elements :
- 1
- Transition Frequency :
- 50MHz
- Current Rating :
- -50mA
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 120V
- Datasheets
- FJV992FMTF
FJV992FMTF Documents
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV992FMTF Overview
This device has a DC current gain of 300 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 120V volts can be used.A maximum collector current of 50mA volts is possible.
FJV992FMTF Features
the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 50MHz
FJV992FMTF Applications
There are a lot of ON Semiconductor
FJV992FMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| FJV92MTF | onsemi | 27,173 | TRANS PNP 350V 0.5A SOT23-3 |
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| FJV992PMTF | onsemi | 2,216 | TRANS PNP 120V 0.05A SOT23-3 |
| FJV992PMTF | onsemi | 2,216 | TRANS PNP 120V 0.05A SOT23-3 |
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