FJV992PMTF
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- Mfr.Part #
- FJV992PMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.05A SOT23-3
- Stock
- 2,216
- In Stock ：
- 2,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 50mA
- Collector Base Voltage (VCBO) :
- -120V
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 300mW
- Transistor Application :
- AMPLIFIER
- Published :
- 2004
- Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Voltage - Rated DC :
- -120V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Width :
- 1.3mm
- Base Part Number :
- FJV992
- Pbfree Code :
- yes
- Length :
- 2.9mm
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 120V
- ECCN Code :
- EAR99
- Frequency :
- 50MHz
- Transition Frequency :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 120V
- hFE Min :
- 200
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Max Breakdown Voltage :
- 120V
- Current Rating :
- -50mA
- Terminal Form :
- Gull wing
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Height :
- 1.04mm
- Collector Emitter Saturation Voltage :
- -300mV
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Weight :
- 30mg
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 50MHz
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Datasheets
- FJV992PMTF
PNP 150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV992PMTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -50mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 120V volts that it can take.Collector current can be as low as 50mA volts at its maximum.
FJV992PMTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is -50mA
a transition frequency of 50MHz
FJV992PMTF Applications
There are a lot of ON Semiconductor
FJV992PMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| FJV92MTF | onsemi | 27,173 | TRANS PNP 350V 0.5A SOT23-3 |
| FJV92MTF | onsemi | 37,347 | TRANS PNP 350V 0.5A SOT23-3 |
| FJV992FMTF | onsemi | 5,626 | TRANS PNP 120V 0.05A SOT23-3 |
| FJV992PMTF | onsemi | 2,216 | TRANS PNP 120V 0.05A SOT23-3 |
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