FJV42MTF
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- Mfr.Part #
- FJV42MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT23-3
- Stock
- 110,765
- In Stock ：
- 110,765
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 25
- Max Operating Temperature :
- 150°C
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Published :
- 2013
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 350V
- Collector Emitter Breakdown Voltage :
- 350V
- Transition Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Power Dissipation :
- 350mW
- Max Collector Current :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Base Voltage (VCBO) :
- 350V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- FJV42
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 350V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 13 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Polarity/Channel Type :
- NPN
- Frequency :
- 50MHz
- Number of Pins :
- 3
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 350mW
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 30mg
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- FJV42MTF
NPN 100nA ICBO 1 Elements 3 Terminations NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV42MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
FJV42MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz
FJV42MTF Applications
There are a lot of ON Semiconductor
FJV42MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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