FJV42MTF
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- Mfr.Part #
- FJV42MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT23-3
- Stock
- 110,765
- In Stock ：
- 110,765
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Frequency :
- 50MHz
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Max Power Dissipation :
- 350mW
- hFE Min :
- 25
- Factory Lead Time :
- 13 Weeks
- Power Dissipation :
- 350mW
- Collector Emitter Breakdown Voltage :
- 350V
- Collector Base Voltage (VCBO) :
- 350V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Max Operating Temperature :
- 150°C
- Published :
- 2013
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Weight :
- 30mg
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- FJV42
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 50MHz
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 350V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 350V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 50MHz
- Datasheets
- FJV42MTF
FJV42MTF Documents
NPN 100nA ICBO 1 Elements 3 Terminations NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV42MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 30mA 10V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
FJV42MTF Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 50MHz
FJV42MTF Applications
There are a lot of ON Semiconductor
FJV42MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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