FJT44TF
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- Mfr.Part #
- FJT44TF
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-4
- Stock
- 1,792
- In Stock ：
- 1,792
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 500V
- Length :
- 6.5mm
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 18 Weeks
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Current Rating :
- 300mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 2W
- Base Part Number :
- FJT44
- Max Collector Current :
- 300mA
- Height :
- 1.6mm
- Voltage - Rated DC :
- 400V
- Current - Collector Cutoff (Max) :
- 500nA
- Max Breakdown Voltage :
- 400V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 750mV
- Collector Emitter Voltage (VCEO) :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- hFE Min :
- 50
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Width :
- 3.5mm
- Weight :
- 188mg
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Transistor Type :
- NPN
- Datasheets
- FJT44TF
NPN 150°C TJ 500nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FJT44TF Overview
This device has a DC current gain of 50 @ 10mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 750mV.A VCE saturation (Max) of 750mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 400V volts can be used.A maximum collector current of 300mA volts is possible.
FJT44TF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
FJT44TF Applications
There are a lot of ON Semiconductor
FJT44TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJT44KTF | onsemi | 1,143 | TRANS NPN 400V 0.3A SOT223-4 |
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